METHOD FOR DETERMINING DIRECTIONS OF DISLOCATIONS IN SINGLE CRYSTALS BY ACM Russian patent published in 2018 - IPC H01L21/66 

FIELD: chemistry.

SUBSTANCE: method has an advantage over the X-ray diffraction topography method: it is not necessary to destroy the sample under study, it is possible to carry out the express control of large batches of single crystals. The method provides for the first time the possibility of express-determining the direction of dislocations in single crystals and epitaxial films. The method for determining dislocations in crystals involves selective chemical etching of the crystal to obtain etch pits with a size of 0.4-2 mcm and observation of etch pits by means of an atomic force microscope.

EFFECT: inclination angle of the faces of the etch pits is measured, according to the obtained data, the geometric models of the pits are constructed and the directions of the dislocations are calculated from the slope of the etching pit pyramids.

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