METHOD OF DETECTING ETCHING DISLOCATION PITS ON THE SURFACE OF MONOCRYSTALLINE GALLIUM ARSENIDE PLATES Russian patent published in 2025 - IPC H01L21/302 

FIELD: semiconductor technologies.

SUBSTANCE: invention relates to semiconductor technologies and can be used to detect structural defects of crystals. Its essence lies in the fact that a method for detecting dislocation etching pits on the surface of monocrystalline gallium arsenide plates, during which the monocrystalline gallium arsenide plates are first processed, includes mechanical grinding of monocrystalline gallium arsenide plates, their chemical polishing in an etching agent based on sulphuric acid and hydrogen peroxide, selective etching of plates of monocrystalline gallium arsenide in molten potassium hydroxide containing water, and at the end, dislocation etching pits are detected: after selective etching prior to detection of dislocation pits etching plates of monocrystalline gallium arsenide are additionally treated by the specified polishing etching agent on the basis of sulphuric acid and hydrogen peroxide till the moment of formation of visual boundaries between pits of etching.

EFFECT: providing the possibility of increasing the accuracy of identification of etching pits.

1 cl, 3 dwg