METHOD FOR OBTAINING MICROSTRUCTURES ON THE SURFACE OF A SEMICONDUCTOR Russian patent published in 2021 - IPC H01L21/268 

FIELD: laser technology.

SUBSTANCE: invention relates to the field of laser technology and can be used for technological purposes to estimate the dislocation density when working with monocrystalline germanium. The method for obtaining microstructures on the surface of a semiconductor according to the invention involves irradiating the surface of a semiconductor at a laser wavelength, while a series of laser pulses with a laser pulse repetition frequency, the energy density of the laser beam in the irradiated zone and the pulse duration are used to irradiate each zone, providing a change in the microstructure of the surface of the near-surface layer of a semiconductor without melting it, in this case, the semiconductor is made in the form of monocrystalline germanium with a crystallographic orientation <111> and a polished surface to be irradiated, the irradiation of the surface of monocrystalline germanium is carried out with a laser beam at an energy density in a pulse of 0.1-1.15 J/cm² along a raster trajectory with the possibility of overlapping laser beam spots on the irradiated surface of at least 95%, irradiation is carried out at a wavelength outside the germanium transparency zone, while each zone is irradiated with a series of several dozen laser pulses, the pulse duration is no less than 1 ns and no more than 30 ns.

EFFECT: invention provides an improvement in the quality of the manifestation of the regular microrelief of the surface of single-crystal germanium and the determination of height differences on the surface of the microrelief.

7 cl, 4 dwg