SEMICONDUCTOR MEMORY UNIT Russian patent published in 2000 - IPC

Abstract RU 2156506 C2

FIELD: computer engineering. SUBSTANCE: device may be used in synchronous dynamic random access memory units for synchronous access to memory matrix with system synchronization pulse from external system, for example, from central processor. Synchronous memory unit has memory matrix, which is split into two memory banks. Each bank is either in active cycle or in regeneration cycle. Each bank contains line decoder, and input-output buffers. Chosen memory bank responds to activation signal and works in active cycle, while non-chosen memory bank responds to no-activation signal operates in regeneration mode. EFFECT: free synchronization of input and output data by external system synchronization pulse with high data transmission rate. 4 cl, 62 dwg, 3 tbl

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RU 2 156 506 C2

Authors

Churoo Park

Khun-Soon Jang

Chull-Soo Kim

Mung-Kho Kim

Seung-Khun Li

Si-Jol Li

Kho-Cheol Li

Tae-Dzhin Kim

Jun-Kho Choi

Dates

2000-09-20Published

1993-10-01Filed