FIELD: measurement technology.
SUBSTANCE: invention relates to measurement of temperature of thin surface layers, in particular, a porous dielectric layer in chemical industry (catalysis), in making optical and chemical sensors, as well as in cryogenic etching of dielectric materials in microelectronics. Disclosed is a contactless method of measuring temperature of a porous layer, characterised by that porous layer temperature is defined by calibration curves of refraction index of porous layer versus temperature at constant pressure of vapours of selected chemical compounds, adsorbed in porous layer, calculated based on experimental curves of refraction index porous layer versus relative pressure of volatile vapours in that layer at room temperature.
EFFECT: high accuracy of obtained results.
3 cl, 4 dwg
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