FORMING OF MULTILEVEL COPPER INTERCONNECTIONS OF MICRO IC WITH APPLICATION OF TUNGSTEN RIGID MASK Russian patent published in 2014 - IPC H01L21/768 B82B3/00 

FIELD: metallurgy.

SUBSTANCE: method comprises the process of dual Damascene ICs formation through duplex rigid mask including application of insulation dielectric ply on the plate, conductors of IC multilevel metallisation being formed in dielectric body. Bottom and top layers of silicon dioxide rigid mask are applied over said insulation dielectric. Topological mask of resist is formed on top ply of duplex rigid mask to etch said top ply by said topological mask. Residual resist is removed from the surface of topological pattern formed in top layer of duplex rigid mask. Bottom layer of duplex silicon dioxide rigid mask is etched by topological patter of said top ply of duplex rigid mask. Trenches and transition contact plies are etched in every insulation dielectric ply by topological patter in duplex rigid mask. Formed trenches and transition contact openings are filled with metallisation ply and removal of residual volume of applied metal from the plate surface. Note here that tungsten ply is used as the material of rigid mask top ply.

EFFECT: higher reliability and yield.

2 cl, 10 dwg