METHOD FOR FLAW INSPECTION OF SILICON DIOXIDE FILMS ON SILICON SUBSTRATES Russian patent published in 1999 - IPC

Abstract RU 2127927 C1

FIELD: microelectronics; estimating quality of silicon dioxide layers grown on silicon substrates. SUBSTANCE: changes in readings of film refraction measured by using ellipse metering technique under normal conditions and upon heating structure to 350-400 K are recorded; prior to taking measurements, structure is held in ethyl alcohol at temperature of 320-350 K for 10-15 min. EFFECT: improved sensitivity and proximity of silicon dioxide film inspection for porosity.

Similar patents RU2127927C1

Title	Year	Author	Number
METHOD OF TEST FOR DEFECTS OF SILICON DIOXIDE FILMS ON SILICON BACKINGS	1991	Vinogradov A.S. Gudenko B.V. Orlovskaja S.A. Skupov V.D.	RU2033660C1
METHOD TESTING SILICON FILMS ON DIELECTRIC SUBSTRATES FOR DEFECTS	1999	Latysheva N.D. Skupov V.D. Smolin V.K.	RU2150158C1
FLAW INSPECTION METHOD FOR INSULATING FILMS OF SEMICONDUCTOR STRUCTURES	1995	Skupov V.D.	RU2095885C1
METHOD FOR FLAW INSPECTION OF INSULATING FILMS	2000	Skupov V.D. Smolin V.K.	RU2179351C2
MANUFACTURING TECHNIQUE FOR SILICON-ON-SILICON DIOXIDE FILM STRUCTURE	1996	Skupov V.D. Smolin V.K.	RU2128382C1
INSULATING FILM SERVICEABILITY CHECK METHOD	1999	Skupov V.D. Smolin V.K.	RU2167470C2
METHOD FOR TREATMENT OF SILICON-ON-SAPPHIRE STRUCTURES	2000	Skupov V.D. Smolin V.K.	RU2185685C2
METHOD FOR FLAW INSPECTION OF SILICON FILMS ON INSULATING SUBSTRATES	2000	Latysheva N.D. Skupov V.D. Smolin V.K.	RU2185684C2
PROCESS OF MANUFACTURE OF STRUCTURE "SILICON-SILICON DIOXIDE FILM"	1991	Skupov V.D. Tsypkin G.A. Aglaumov S.N. Gudenko B.V.	RU2034365C1
SEMICONDUCTOR STRUCTURE MANUFACTURING PROCESS	1994	Skupov V.D. Ivin A.L. Komarova T.V.	RU2087049C1

RU 2 127 927 C1

Authors

Skupov V.D.

Smolin V.K.

Lashmanov V.V.

Dates

1999-03-20—Published

1996-07-16—Filed