METHOD OF MONITORING CHARACTERISTICS OF FILMS OF POROUS DIELECTRICS ON SEMICONDUCTOR SUBSTRATE IN CRYOGENIC PLASMA ETCHING CONDITIONS Russian patent published in 2025 - IPC G01J3/42 H01L21/66 

FIELD: measuring.

SUBSTANCE: invention relates to the field of non-destructive testing of technological processes of microelectronics in real time and concerns a method of monitoring characteristics of films of porous dielectrics on a semiconductor substrate. Method is based on using a spectral reflectometry system which includes an optical probe with two fibre-optic guides for incident and reflected beams, a white light source and a spectrometer. Characteristics are measured in cryogenic plasma etching conditions and results are obtained in real time, for which a data stream output system and a personal computer with installed software for collecting data and solving the inverse problem of reflectometry are used to determine degree of porosity, thickness, refraction index, degree of pore filling with condensed adsorbate and temperature of semiconductor substrate, using numerical optimization methods or regression model of machine learning.

EFFECT: enabling real-time measurements in cryogenic plasma etching and expanding the class of etching installations on which the method is applicable.

1 cl