FIELD: physics.
SUBSTANCE: method of changing direction and reduction of divergence of radiation of semiconductor vertically emitting laser involves measurement of VCSEL beam pattern. Radiation model is used for simulation of diffraction grating to provide required turn of radiation and propagation diagram. Based on model diffraction grating is made. Diffraction grating and emitter crystal are heated. Diffraction grating is placed and glued to emitter crystal.
EFFECT: wider range of methods of changing direction and reduction of divergence of radiation of semiconductor vertically emitting laser.
1 cl, 2 dwg
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