FIELD: laser engineering.
SUBSTANCE: laser device has a matrix of vertical-cavity surface-emitting lasers (VCSEL) located on the same semiconductor substrate (101). Lasers comprise first electrode (100), a first distributed Bragg reflector (110), active layer (115), a second distributed Bragg reflector (120) and second electrode (125). Active layer (115) is located between said Bragg reflectors (110, 120). Electrodes (100 and 125) are configured to supply electric current through active layer (115) to generate laser radiation (150). Lasers are lower radiators which are configured to emit laser light (150) through semiconductor substrate (101). Laser device has optical structure (140) configured to increase angle (156) of laser radiation (150) to improve the safety of the laser eye device. Said structure (140) is an integral part of the structure of the semiconductor layers of the laser instrument, wherein optical structure (140) comprises semiconductor substrate (101) surface structure, wherein thickness of semiconductor substrate (101) is configured such that laser radiation (150) emitted by adjacent vertical-cavity surface-emitting lasers crosses each other in plane of surface structure, and wherein the surface structure is configured to allow uniform emitting from the emitting surface of semiconductor substrate (101).
EFFECT: technical result is enabling safe operation of the laser instrument.
10 cl, 5 dwg
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Authors
Dates
2020-06-09—Published
2018-03-30—Filed