FIELD: chemistry.
SUBSTANCE: invention can be used in microelectronic equipment with low currents and voltages, where switching is required in time intervals of 20 to 70 minutes at 10-150 °C. The resistive material contains silver sulfide, germanium sulfide, non-stoichiometric, stoichiometric arsenic sulfide and 7 atomic percent of carbon in the form of single-wall nanotubes according to the empirical formula: AgGe1+xAs1-x(S+CNT)3, where 0.4≤x≤0.6.
EFFECT: provision of electrical conductivity relaxation time from 4 to 18 seconds and electrical resistivity of 106-109 Ohm⋅m, in the temperature range of 10-150 degrees.
3 dwg
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