FIELD: electricity.
SUBSTANCE: proposed bipolar-field multidifferential operational amplifier, which comprises a first (1) input bipolar transistor, the first (2) input device, the first (3) input FET with controlling p-n junction, the second (4) input device, the second ( 5) input bipolar transistor, and the third (6) input device, the second (7) input FET with controlling p-n junction, a fourth (8) input device, a current mirror (9), the first (10) power supply bus buffer amplifier (11), second (12) power supply bus, the first (13) and second (14) additional resistors, the first (15) and second (16) and third (17) additional bipolar transistors, the first (18) third current stabilizing two-pole, fourth (19), fifth (20) and sixth (21) additional bipolar transistors, the second (22) additional current stabilizing two-pole.
EFFECT: increase in voltage gain open multidifferential operational amplifier while maintaining the high stability of the zero level.
2 cl, 9 dwg
Title | Year | Author | Number |
---|---|---|---|
BIPOLAR-FIELD DIFFERENTIAL OPERATIONAL AMPLIFIER | 2015 |
|
RU2615068C1 |
LOW TEMPERATURE RADIATION RESISTANT MULTIDIFFERENCIAL OPERATION AMPLIFIER | 2016 |
|
RU2624585C1 |
MULTIDIFFERENTIAL OPERATIONAL AMPLIFIER | 2015 |
|
RU2621287C2 |
PRECISION OPERATIONAL AMPLIFIER FOR RADIATION-PROOF BIPOLAR-FIELD TECHNOLOGICAL PROCESS | 2014 |
|
RU2571569C1 |
RADIATION-RESISTANT MULTIDIFFERENTIAL OPERATIONAL AMPLIFIER FOR OPERATION AT LOW TEMPERATURES | 2016 |
|
RU2628131C1 |
MULTIDIFFERENTIAL AMPLIFIER FOR RADIATION-RESISTANT BIPOLAR-FIELD TECHNOLOGICAL PROCESS | 2014 |
|
RU2566964C1 |
GALLIUM ARSENIDE INPUT DIFFERENTIAL CASCADE OF CLASS AB OF A FAST OPERATIONAL AMPLIFIER | 2022 |
|
RU2786943C1 |
LOW-TEMPERATURE RADIATION-RESISTANT MULTIDIFFERENTIAL OPERATING AMPLIFIER | 2016 |
|
RU2627094C1 |
GALLIUM ARSENIDE OPERATIONAL AMPLIFIER BASED ON PNP BIPOLAR AND FIELD-EFFECT TRANSISTORS WITH CONTROL PN JUNCTION | 2023 |
|
RU2813281C1 |
MULTICHANNEL DIFFERENTIAL AMPLIFIER BASED ON GALLIUM ARSENIDE FIELD-EFFECT AND BIPOLAR TRANSISTORS | 2022 |
|
RU2792710C1 |
Authors
Dates
2017-04-03—Published
2015-12-22—Filed