MULTICHANNEL DIFFERENTIAL AMPLIFIER BASED ON GALLIUM ARSENIDE FIELD-EFFECT AND BIPOLAR TRANSISTORS Russian patent published in 2023 - IPC H03F3/343 

FIELD: radio engineering.

SUBSTANCE: low-noise device for amplifying analog signals, in the structure of analog microcircuits for various functional purposes, for example, in gallium arsenide operational amplifiers (op-amps), comparators, etc., incl. operating in a wide range of temperatures and exposure to radiation. A multichannel differential amplifier based on gallium arsenide field and bipolar transistors contains the first (1) and second (2) inputs of the device, the first (3) and second (4) current outputs of the device, matched with the first (5) power supply bus, the first (6) input field-effect transistor, the gate of which is connected to the first (1) input of the device, the source is connected to the emitter of the first (7) output bipolar transistor, the second (8) input field-effect transistor, the gate of which is connected to the second (2) input of the device, the source is connected to emitter of the second (9) output bipolar transistor; bipolar transistor and the second (11) power supply bus, and the bases of the first (7) and second (9) output bipolar transistors are interconnected. The first (13) and second (14) output field-effect transistors are introduced into the circuit, the sources of which are combined and connected to the bases of the first (7) and second (9) output bipolar transistors, and are also connected to the second (11) power supply bus through the third (15) current-stabilizing two-terminal circuit, the drains of the first (6) and second (8) input field-effect transistors are matched with the first (5) power supply bus, and the drain of the first (13) output of field-effect transistor is connected to the first (3) current output of the device, and the drain of the second (14) output of field-effect transistor is connected to the second (4) current output of the device.

EFFECT: creation of conditions under which in the remote control of Fig. 1 an increase in the gain slope when operating GaAs field-effect and GaAs bipolar transistors with low static currents is provided.

3 cl, 5 dwg