GALLIUM ARSENIDE OPERATIONAL AMPLIFIER BASED ON PNP BIPOLAR AND FIELD-EFFECT TRANSISTORS WITH CONTROL PN JUNCTION Russian patent published in 2024 - IPC H03F3/00 

FIELD: radio engineering.

SUBSTANCE: operational amplifier is proposed, in which the combined bases of the first (8) and second (9) bipolar transistors of the current mirror are connected to the drain of the first (4) input field-effect transistor, the collector of the second (9) bipolar transistor of the current mirror is connected to the base of the second (13) matching bipolar transistor, the matching two-terminal network (12) is made in the form of an emitter pn junction based on a bipolar transistor, the collector of the first (11) matching bipolar transistor is connected to the first (6) power supply bus through the second (16) current-stabilizing two-terminal network, and the collector of the second (13 ) of the matching bipolar transistor is connected to the first (6) power supply bus, the first (7) reference current source is made in the form of two parallel connected and identical second (17) and third (18) reference current sources.

EFFECT: creating an operational amplifier, which is implemented within the combined GaAs process, allowing the creation of only PNP bipolar and nJFet field-effect transistors, as well as providing a low level of zero offset.

1 cl, 5 dwg