FIELD: radio engineering, communication.
SUBSTANCE: radiation-resistant multidifferential operational amplifier for operation at low temperatures contains the first and the second input bipolar transistors, the first and the second input field effect transistors, the first and the second current mirrors, the first and the second power supply lines. The first and the second additional field effect transistors are introduced into the circuit.
EFFECT: decreasing the systematic component of the zero offset voltage.
4 cl, 16 dwg
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