SOLUTION FOR HYDROCHEMICAL PRECIPITATION OF SEMICONDUCTOR FILMS OF INDIUM SELENIDE Russian patent published in 2017 - IPC C23C18/12 C23C18/16 C01G15/00 C01B19/04 C30B29/46 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of obtaining indium selenide (III), widely used in microelectronics for producing nuclear radiation detectors and creating solar radiation inverters as the basis for such material as copper diselenide (I) and indium CuInSe₂. The solution for hydrochemical precipitation of a thin semiconductor film of indium selenide (III) contains an indium (III) salt, selenocarbamide, tartaric acid and sodium sulfite at the following concentrations of reagents, mol/l: indium (III) salt 0.01-0.15; selenocarbamide 0.005-0.1; tartaric acid 0.01-0.06; sodium sulfite 0.005-0.1. Due to the presence of such additives as selenocarbamide and sodium sulfite, the process kinetics and the precipitation conditions are modified in comparison with the prototype. Selenocarbamide is a source of selenide ions. Sodium sulfite acts as an antioxidant, preventing the selenocarbamide oxidation in the solution. Tartaric acid simultaneously complexes indium ions and increases the buffering capacity of the reaction mixture, maintaining the pH of the solution at a certain level.

EFFECT: layers obtained from said precipitation solution have good adhesion to substrate material and a mirror surface, their thickness is equal to 300 nm.

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