FIELD: electrical engineering.
SUBSTANCE: invention relates to semiconductor material science and can be used in optoelectronic devices operating in infrared spectrum, laser and sensor equipment. Method of producing photosensitive films of lead selenide on a substrate involves the fact that a solution for producing lead selenide films contains ascorbic acid and sodium sulphite as an antioxidant for selenourea at ratio of 2:1 to 4:1, solution for deposition of films is exposed to ultrasound at frequency 35 kHz, and obtained films are held in air at temperature of 540–590 K.
EFFECT: increased photosensitivity of lead selenide films.
3 cl, 1 tbl, 8 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PRODUCING PHOTOSENSITIVE CHEMICALLY DEPOSITED FILMS OF LEAD SELENIDE | 2015 |
|
RU2617350C1 |
| METHOD OF PRODUCING PHOTOSENSITIVE LAYERS OF LEAD SELENIDE | 2019 |
|
RU2745015C2 |
| METHOD OF PRODUCING PHOTOSENSITIVE LEAD SULPHIDE FILMS | 2024 |
|
RU2824776C1 |
| METHOD FOR PRODUCING PHOTO-SENSITIVE LEAD SULFIDE FILMS | 2022 |
|
RU2783294C1 |
| METHOD FOR OBTAINING PHOTOSENSITIVE LEAD SULPHIDE FILMS | 2023 |
|
RU2808317C1 |
| METHOD FOR MAKING PbSnSe SUBSTITUTION SOLID SOLUTION FILMS BY ION EXCHANGE PROCESS | 2013 |
|
RU2552588C1 |
| METHOD OF PRODUCING THIN FILMS OF Pb-Ch-Ch TYPE AND DEVICE FOR ITS IMPLEMENTATION | 2023 |
|
RU2816689C1 |
| SOLUTION FOR HYDROCHEMICAL PRECIPITATION OF SEMICONDUCTOR FILMS OF INDIUM SELENIDE | 2016 |
|
RU2617168C1 |
| METHOD OF MAKING CHEMICALLY DEPOSITED LEAD SELENIDE FILMS SENSITIVE TO INFRARED RADIATION | 2008 |
|
RU2357321C1 |
| 0 |
|
SU356318A1 |
