FIELD: semiconductor material science.
SUBSTANCE: invention relates to the technology of producing thin photosensitive films of lead selenide, which are widely used in devices for detecting infrared radiation in range of 1–5 mcm. Lead selenide films are deposited on a dielectric substrate from aqueous solutions containing a lead (II) salt, ethylenediamine, ammonium acetate, ammonium iodide, selenourea, during precipitation, tin (II) chloride is additionally added to the solution as an inhibitor of the selenourea oxidation process in amount of 0.0005–0.003 mol/l. Freshly deposited samples are subjected to thermal treatment at 653–673 K.
EFFECT: technical result of invention is high photosensitivity of lead selenide films to infrared radiation up to 300 V/W at room temperature and up to 1,853 K at shallow cooling to −60 °C.
1 cl, 1 tbl, 3 ex
| Title | Year | Author | Number |
|---|---|---|---|
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