MEASURING PROBE DEVICE AND METHOD FOR MEASURING ELECTROPHYSICAL PARAMETERS OF SEMICONDUCTOR WAFERS Russian patent published in 2017 - IPC G01R1/73 H01L21/66 

FIELD: measuring equipment.

SUBSTANCE: device comprises two electrolytic probes, in which each body is represented in the form of a hollow transparent tube of the dielectric material, at one end of which a monolith tip of dielectric capillary or porous material is fixed in the form of a cone with an elongated cylindrical base , and at the other end a rubber plug is fixed. The device electrodes are rings of inert metal and are located on the outer surface of the conical tips. The material of the conical tips is impregnated with electrolyte, the probes are mounted on the measured plate by the conical tips along the normal to the front surface, DC voltage of different polarity is applied to the electrodes, DC voltage is gradually increased, and short periodic sinusoidal voltage pulses with an amplitude, greater than the DC voltage value, are simultaneously supplied to the measuring electrodes of the electrolytic probes. Current-voltage semiconductor characteristic is recorded by the output device of the radio devices.

EFFECT: increasing the measurement accuracy and expanding the application area.

4 cl, 3 dwg, 1 ex