HIGH-PITCHED SWITCHING UNIT FOR THE COMPACT ENERGY ABSORBER MODULE Russian patent published in 2017 - IPC H03K17/00 

FIELD: electricity.

SUBSTANCE: high-pitched switching unit is worked out. It comprises: a switching scheme cascode circuit that comes with at any rate two triode transistors (VT1, VT2), constant auxiliary voltage source (U1), actuating signal source (U2) and complementary transistor (VT3) that has a polarity of conductivity that is counter to the polarity of conductivity of the switching scheme cascode circuit triode transistors (VT1, VT2). The actuating signal source (U2) is adapted to give the actuating signal to the control lead of the first triode transistor (VT1) of the switching scheme cascode circuit and to the control lead of the complementary transistor (VT3) for the purpose of simultaneous maintaining control of the first triode transistor (VT1) of the switching scheme cascode circuit and of the complementary transistor (VT3), therethrough maintaining control of the second triode transistor (VT2) of the switching scheme cascode circuit.

EFFECT: high-pitched switching unit loss enhancement and size reduction.

7 cl, 2 dwg