SWITCHING DEVICE WITH SERIES CONNECTION OF JUNCTION FIELD-EFFECT TRANSISTORS Russian patent published in 2015 - IPC H03K17/10 

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to switching devices. The device includes series connection of at least two junction field-effect transistors (JFET) (J₁-J_n), where the next JFET (J₂-J_n) are connected in series to the bottom JFET (J-₁), wherein a ladder circuit for stabilising the gate voltage of the JFET (J₁-J_n) is connected between the second lead (2) and the first lead (1). In each case, an auxiliary circuit (5) is connected between gate leads (G_J2, G_J3,…G_Jn) of said next JFET (J₂-J_n) and corresponding cathode leads of diodes (D_AV) of said ladder circuit. Owing to said auxiliary circuit during dynamic connection and in stationary on state, potential at the corresponding gate lead is higher than the potential of the associated source lead.

EFFECT: high reliability of operation of the device.

4 cl, 3 dwg