CHARGE-SENSITIVE PREAMPLIFIER Russian patent published in 2014 - IPC H03F3/00 

Abstract RU 2526756 C1

FIELD: electricity.

SUBSTANCE: device comprises an input field transistor of n-type, current amplifier channel based on a pair of bipolar transistors of pnp-type, and the main amplifier based on a wide-band operating amplifier covered by capacitance-resistance feedback coupling, at that in the charge-sensitive preamplifier the input field transistor and current amplifier channels are coupled in cascade and differential way so that drain of the input field transistor is coupled to emitter of the first bipolar transistor and collectors of these transistors are coupled to non-inverting and inverting inputs of the operating amplifier respectively and values of load resistors for the bipolar transistors are selected on condition of input noise minimisation.

EFFECT: improving dynamic capacitance of the preamplifier.

3 dwg

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RU 2 526 756 C1

Authors

Amosov Vladimir Nikolaevich

Volkov Viktor Sergeevich

Marchenko Nikolaj Pavlovich

Nikolaev Sergej Arkad'Evich

Rodionov Nikolaj Borisovich

Dates

2014-08-27Published

2013-01-22Filed