FIELD: physics.
SUBSTANCE: multi-transitional solar cell for the cosmic radiation environment. The multi-transitional solar cell has a plurality of solar sub-elements disposed in descending order of the forbidden band, including: a first solar sub-element consisting of InGaP and having a first forbidden zone. The first solar sub-element has the first short-circuit current associated with it; second solar sub-element consisting of GaAs and having a second forbidden zone that has a width less than the first forbidden band. The second solar sub-element has a second short-circuit current connected to it. At the beginning of the service life, the first short-circuit current is less than the second short-circuit current, so that the AM0 conversion efficiency is suboptimal. A third solar sub-element consisting of InGaAs disposed over the second solar sub-element and having a third forbidden zone narrower than the second forbidden zone and a third short-circuit current substantially matched to the second short-circuit current; and a fourth solar sub-element consisting of InGaAs disposed over the third solar sub-element and having a fourth forbidden zone narrower than the third bandgap and a fourth short-circuit current substantially matched to the third short-circuit current. However, at the end of their service life, short-circuit currents become substantially consistent.
EFFECT: increased efficiency of AM0conversion.
12 cl, 3 dwg
Title | Year | Author | Number |
---|---|---|---|
FOUR-JUNCTION SOLAR CELL FOR SPACE APPLICATIONS | 2018 |
|
RU2755630C2 |
FOUR-JUNCTION SOLAR CELL | 2015 |
|
RU2610225C1 |
FOUR-TRANSIT SOLAR CELL | 2015 |
|
RU2599064C1 |
INTEGRATED MULTIJUNCTION PILE-LIKE SOLAR BATTERY | 2015 |
|
RU2614237C1 |
MULTI-JUNCTION SOLAR CELL | 2019 |
|
RU2753168C1 |
MULTI-LAYER PHOTO CONVERTER | 2008 |
|
RU2364007C1 |
MULTIJUNCTION SOLAR CELL | 2015 |
|
RU2642524C1 |
PHOTOCONVERTER WITH QUANTUM DOTS | 2013 |
|
RU2670362C2 |
PHOTOVOLTAIC CELL WITH VARIABLE BAND GAP | 2014 |
|
RU2657073C2 |
PHOTOELECTRIC CONVERTER BASED ON SEMICONDUCTOR COMPOUNDS ABC FORMED ON SILICON SUBSTRATE | 2015 |
|
RU2624831C2 |
Authors
Dates
2017-08-21—Published
2013-12-13—Filed