PHOTOELECTRIC CONVERTER BASED ON SEMICONDUCTOR COMPOUNDS ABC  FORMED ON SILICON SUBSTRATE Russian patent published in 2017 - IPC H01L31/248 H01L31/04 

FIELD: physics.

SUBSTANCE: crystalline silicon is selected as a substrate for the photoelectric converter, with high strength and heat-conducting properties. The method is carried out by using semiconductor layers of the compounds A²B⁴C⁵₂ in the photoelectric converter composition, close in the lattice parameter to silicon, for example layers ZnGeP₂ and ZnSiP₂, whereby there is no formation of the crystalline defects, such as dislocation misfit, which leads to the increase of the quantum converting efficiency of the optical photoconverter radiation, wherein the result is achieved by increasing the lifetime of the minority charge carriers due to the reduced density of the crystal defects by using the semiconductor layers of the compounds A²B⁴C⁵₂, close in the lattice parameter to silicon, for example layers ZnGeP₂ and ZnSiP₂.

EFFECT: creating the photoelectric converter with multiple p-n-junctions, characterized by the high efficiency due to the introduction of the photoconverter close in the lattice parameter of the silicon layers on the basis of the said multi-component semiconductor compounds.

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