MULTI-LAYER PHOTO CONVERTER Russian patent published in 2009 - IPC H01L27/14 

FIELD: semiconductors.

SUBSTANCE: invention relates to solid-state photo converters, particularly, to multi-transition solar photo elements to convert solar radiation energy into electric power and can be used solid-state industry for production of solar power generation systems. Proposed converter comprises solid metal terminal, substrate made from p⁺-GaAs, bottom element, tunnel diode, top element and metal contact screen with contact sublayer. Lower element comprises p-layer of rear potential barrier, base p-layer, emitter n-layer and n-layer of wide-zone hole. Tunnel diode comprises n⁺⁺-layer and p⁺⁺-layer from AIGaAs. Top element comprises p-layer of the rear potential barrier, base p-layer, 0.35 to 0.70 mcm-thick, emitter n-layer and n-layer of wide-zone hole.

EFFECT: improved photo converter parameters.

10 cl, 7 dwg