PHOTOCONVERTER WITH QUANTUM DOTS Russian patent published in 2018 - IPC H01L31/725 B82Y40/00 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor photoconverters, which convert solar radiation into electricity, and can be used in the semiconductor industry to create power generation systems. The photoconverter with quantum dots consists of a substrate (1), for example, Ge or GaAs, and at least one photoactive p-n junction (2), for example, GaAs or GaInAs with an indium concentration of 0-2% containing the base layer (3), for example, GaAs or GaInAs with an indium concentration of 0-2%, an undoped layer (4), for example, GaAs or GaInAs with an indium concentration of 0-2%, containing at least one layer of self-assembled quantum dots (5) made by depositing a layer In_xGa_1-xAs with indium content x from 20 to 50%, emitter layer (6), for example from GaAs or GaInAs with an indium concentration of 0-2%.

EFFECT: photoconverter has increased efficiency.

6 cl, 3 dwg