POWERFUL SEMICONDUCTOR PHASE SHIFTER Russian patent published in 2017 - IPC H01P1/185 

FIELD: radio engineering, communication.

SUBSTANCE: according to the invention in a powerful semiconductor phase shifter comprising a transmission line segment with a main loop connected to it, at the end of which a pin diode is mounted, to which an additional loop installed behind the diode with the possibility of resizing the loop is connected, herewith an additional loop installed behind the diode is made up of at least two serially connected segments of the transmission line. A segment of the transmission line with a smaller than the main loop wave resistance is connected directly to the diode, the second segment having the possibility of resizing and connected to the first one has a wave resistance greater than the first segment.

EFFECT: simplifies the design and the ability to accurately set the phase and loss without reducing the range of operating frequencies.

2 cl, 2 dwg