MICROWAVE PHASE SHIFTER BASED ON SEMICONDUCTOR CIRCUIT Russian patent published in 2010 - IPC H01P1/18 

FIELD: physics; radio.

SUBSTANCE: invention relates to electronics and can be used in satellite communication and radar systems in the microwave region with active phase antenna arrays. The device comprises two parallel channels, inputs and outputs of which are respectively connected to input and output microstrips, with the first channel containing series-connected first Schottky-barrier-field-effect transistor, first phase-shifting element in form of a microstrip and a second Schottky-barrier-field-effect transistor, and the second channel containing series-connected third Schottky-barrier-field-effect transistor, second detachable phase-shifting element made in form of a microstrip or LC-circuit on lumped elements and lying outside the limits of the functional surface of the semiconductor circuit, and the width of the gate of each field-effect transistor equals the width of the microstrips.

EFFECT: possibility of obtaining different phase discrete elements when making multi-bit phase shifters based on a single semiconductor circuit.

3 cl, 4 dwg