METHOD FOR PRODUCING AMORPHOUS FILMS OF CHALCOGENIDE GLASS-BASED SEMICONDUCTORS WITH PHASE MEMORY EFFECT Russian patent published in 2017 - IPC C23C14/06 H01L21/203 

FIELD: chemistry.

SUBSTANCE: deposition of a layer of chalcogenide material of the system of ternary tellurides of germanium and antimony Ge-Sb-Te is carried out by vacuum-thermal evaporation of explosive type. A mixture of stoichiometric compositions GeSb₂Te₄ and Ge₂Sb₂Te₅ at a ratio of 1:1, mechanically activated before depositing a layer of the mentioned chalcogenide material is used as the chalcogenide material. Before applying a layer of the mentioned chalcogenide material silicon substrate, degreased and thermally oxidized with a formed silicon oxide sublayer is placed into a vacuum chamber preevacuated to a pressure of 3.5⋅10^-6 Pa, then a lower aluminium layer is applied to the surface of the silicon oxide sublayer by vacuum-thermal evaporation. The application of a layer of the mentioned chalcogenide material by the vacuum-thermal evaporation method of the explosive type is carried out at a pressure in the working volume of 10^-6 Pa, the temperature of the substrate 30°C, evaporator temperature 600°C and the evaporation rate of the burden 1-2 nm/s.

EFFECT: development of an economical method for obtaining amorphous films of chalcogenide glass-based semiconductors of the Ge-Sb-Te system with enhanced stability of characteristics, information processing speed and low power consumption is provided.

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