FIELD: chemistry.
SUBSTANCE: used bismuth modified chalcogenide semiconducting material of Ge2Sb2Te5. The said material is mechanically activated. Carried out non-equilibrium high-frequency ion-plasma deposition of material in the gas mix of argon and hydrogen at a ratio of 90:10. Material deposited on a dielectric layer in medium vacuum at a pressure between 0.5 to 1.0 Pa and radio-frequency voltage range of 400 to 470 V.
EFFECT: increase of information transfer speed and reduction of power intake.
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