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2 687 889

(13)

(51)

IPC

H01L21/265(2006-01-01)

(21) (22)

Application

2018130384, 2018-08-20

(24)

Start date

2018-08-20

(22)

Actual filing date

2018-08-20

(45)

Published

2019-05-16

(72)

Inventor

Stepanov Andrej LvovichNuzhdin Vladimir IvanovichValeev Valerij FerdinandovichRogov Aleksej MikhajlovichOsin Yurij Nikolaevich

(73)

Holder

Stepanov Andrej Lvovich

METHOD FOR MANUFACTURING PHASE PERIODIC MICROSTRUCTURES BASED ON CHALCOGENIDE GLASSY SEMICONDUCTORS Russian patent published in 2019 - IPC H01L21/265

Abstract RU 2687889 C1

FIELD: electrical engineering.

SUBSTANCE: invention relates to optoelectronics and specifically to methods of making periodic microstructures based on materials with phase memory – chalcogenide glass-like semiconductors made on the surface of optically transparent materials. In the method for manufacturing phase periodic microstructures based on chalcogenide glassy semiconductors, which consists in forming on the surface of the initial substrate elements of a given microstructure, periodic microstructure is formed by implantation with silver ions with energy of 4–100 keV, radiation dose 1.0⋅10¹⁵–6.5⋅10²⁰ ion/cm² and current density of ion beam 2–50 mcA/cm² through a surface mask.

EFFECT: invention enables to manufacture phase periodic microstructures based on chalcogenide glassy semiconductors per one process cycle in a vacuum.

1 cl, 3 dwg

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RU 2 687 889 C1

Authors

Stepanov Andrej Lvovich

Nuzhdin Vladimir Ivanovich

Valeev Valerij Ferdinandovich

Rogov Aleksej Mikhajlovich

Osin Yurij Nikolaevich

Dates

2019-05-16—Published

2018-08-20—Filed