DEVICE AND METHOD OF CONTROLLING POWER SEMICONDUCTOR SWITCH Russian patent published in 2017 - IPC G01R31/27 

FIELD: electricity.

SUBSTANCE: device includes means (30) for loading the power semiconductor switch (10) with the HF voltage (U_HF) at a frequency above the switching threshold of the power semiconductor switch (10), means (36) for recording the HF current (I_{HF, Ist}), which is the result of the loading of the power semiconductor switch (10) by the HF voltage (U_HF), means (40, 48) for comparing the resultant HF-current (I_HF, _Ist) with an HF current (I_{HF, Soll}) expected depending on the switching state of the power semiconductor switch (10) based on the load of the power semiconductor switch (10) by the HF voltage (U_HF), and means (48) for generating a power semiconductor state signal (66) depending on the comparison result.

EFFECT: no intervention in the power circuit of the switch.

25 cl, 7 dwg