FIELD: electronic equipment.
SUBSTANCE: invention relates to micro- and nanoelectronics. 3D storage matrix based on a complementary memristor-diode cell, which is an electronic integral device with nonvolatile memory, wherein electronic integral device with nonvolatile memory is 3D structure formed of applied on each other combined crossbar, consisting of storage cells containing two memristors with common electrode connected to one of the contacts of Zener diode, and formed in intersection of two parallel conductors on one side of crossbar, connecting corresponding electrodes of memristors of cells into columns, and one orthogonal conductor on the other side, which combines contacts of Zener diodes of neighboring cells in rows, note here that adjacent crossbars are mirror oriented relative to each other and have common row or column buses.
EFFECT: high degree of integration of elements, low power consumption and high speed of operation of the device.
1 cl, 5 dwg
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