FIELD: physics.
SUBSTANCE: laser module contains several submodules (1) located along the first axis (10) side by side on a common carrier. Each of the said submodules (1) comprises a laser region (8) formed by one or more semiconductor laser matrices (5) on the surface of the submodules (1). And, in this case, the laser radiation emitted by the said semiconductor lasers (5) forms an intensity distribution in the working plane facing the said surface of the submodules (1). The submodules (1) and the laser regions (8) are arranged and located such that the projections of the laser regions (8) of the adjacent submodules (1) partially overlap in the direction perpendicular to the said first axis. These laser regions (8) are formed by an arrangement of the said semiconductor laser matrices (5), which comprises two parallel side edges (3). The parallel side edges (3) of the adjacent laser regions (8) are parallel to each other and are inclined at an angle β to the said first axis (10). Herewith 0°<β<90°. The said laser regions (8) are configured to generate a uniform intensity distribution in the working plane in the direction parallel to the first axis by means of an inclined arrangement of the laser regions (8).
EFFECT: providing the possibility of generating a laser line without the need for additional optics.
9 cl, 5 dwg
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Authors
Dates
2017-10-11—Published
2013-06-26—Filed