HEATING SYSTEM COMPRISING SEMICONDUCTOR LIGHT SOURCES Russian patent published in 2018 - IPC H01L21/67 H01L51/56 H05B1/02 H05B3/00 C23C16/46 C30B23/06 C30B25/10 

FIELD: heating.

SUBSTANCE: invention relates to the field of heating devices and can be used to control the processing temperature of a semiconductor wafer when growing a semiconductor layer. Present invention describes heating system (100) and a corresponding method for heating heated surface (180) of object (150, 950) to a processing temperature of at least 100 °C. Heating system (100) comprises semiconductor light sources (115) and is configured to heat an area element of heating surface (180) by at least 50 semiconductor light sources (115) at the same time. Heating system (100) may be part of a reactor for processing semiconductor structures. Light emitted by semiconductor light sources (115) overlaps on heated surface (180). Differences in the characteristics of single separate semiconductor light source (115) can be blurred on heated surface (180) in such a way that a uniform temperature distribution over the processing surface, for example a semiconductor wafer, can be ensured.

EFFECT: higher uniformity of temperature distribution across the processing surface.

13 cl, 15 dwg