METHOD OF TECHNICAL SILICON CLEANING Russian patent published in 2017 - IPC C01B33/37 C01B33/02 C22B9/05 C22B9/10 

Abstract RU 2635157 C1

FIELD: metallurgy.

SUBSTANCE: method includes melt treatment in the presence of flux consisting of sodium bicarbonate and limestone in the ratio of 1:1, at silicon temperature above 1600°C with oxidizing gases, at that 45-60% of flux are loaded into a ladle, then silicon is tapped into the ladle, the remaining flux is loaded as the ladle is filled at equal time intervals. The amount of flux charged into the ladle is 6-11% of the silicon weight in the ladle.

EFFECT: improved quality of the technical silicon due to reduced phosphorus content.

1 tbl, 3 ex

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RU 2 635 157 C1

Authors

Elkin Dmitrij Konstantinovich

Koshkin Sergej Valentinovich

Molyavko Anton Alekseevich

Elkin Konstantin Sergeevich

Dates

2017-11-09Published

2016-10-31Filed