METHOD FOR TECHNICAL SILICON MELTING Russian patent published in 2018 - IPC C01B33/25 C01B33/37 

Abstract RU 2649423 C1

FIELD: metallurgy.

SUBSTANCE: method includes metering, mixing, loading and continuous melting of charge consisting of quartzite, mixture of reducing agents and silicon carbide. During the metering, the charge is divided into two portions: first, the mixture of silicon carbide and quartzite taken in stoichiometric ratio is charged into a furnace, then the remaining portion of quartzite and carbonaceous reducing agents is loaded onto this mixture.

EFFECT: improved quality of technical silicon due to reduction of phosphorus content.

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RU 2 649 423 C1

Authors

Elkin Dmitrij Konstantinovich

Elkin Konstantin Sergeevich

Dates

2018-04-03Published

2016-10-31Filed