METHOD OF POWERED SEMICONDUCTOR DEVICES WELDING Russian patent published in 2018 - IPC B23K1/08 B23K101/40 H01L21/00 H05K3/34 

FIELD: electricity.

SUBSTANCE: in the hole of multiple cassette a supporting glass bushing is previously inserted and connectable assembly components of semiconductor device made in the form of semiconductor crystals, heat sinks and outputs, are uploaded. Place soldered gaskets are placed between them and the resulting assembly is welded in a furnace with a reducing or inert medium by heating to a temperature above the melting point of the solder. The internal diameter of the glass bushing corresponds to the dimensions of loaded parts of semiconductor device assembly.

EFFECT: method allows to increase the degree of alignment of the elements of semiconductor devices assemblies and to prevent mechanical damage to assembly crystals when they are unloaded from the cassette after welding.

5 dwg, 1 tbl