METHOD OF CREATING INTERCONNECTIONS IN SEMICONDUCTOR LASERS Russian patent published in 2014 - IPC H01S5/00 H01L21/02 

FIELD: physics, optics.

SUBSTANCE: invention relates to the technology of producing semiconductor lasers. The method of assembling semiconductor lasers includes gripping a line of laser diodes with a vacuum tool, fixing the line on the contact area of a heatsink, pressing, heating in an inert reducing gas, holding at a temperature higher than the temperature of formation of a multiphase eutectic interconnection and cooling the obtained unit. In the process of cooling the unit, a temperature gradient forms between the connected surfaces in the volume of the liquid eutectic interconnection, where the vector of the temperature gradient is directed perpendicular to the connected planes and parallel to the direction of growth of the crystallising phases.

EFFECT: reduced tension and high heat conductivity in the laser line.

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