FIELD: information technology.
SUBSTANCE: memory controller for updating the value of the memory cell voltage contains a read logic configured to read the value of the memory cell voltage in the non-volatile memory containing the plurality of memory cells, wherein in a plurality of memory cells, the voltage values are respectively set equal to the first threshold voltage or the second threshold voltage; and a write logic connected to the read logic and executed to update the voltage value of the first one or more cells from the plurality of memory cells that is set equal to the second threshold voltage without changing the voltage value of the second one or more cells from the plurality of memory cells that is set equal to the first threshold voltage.
EFFECT: increasing the reliability of cross non-volatile memory.
17 cl, 6 dwg
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Authors
Dates
2018-02-07—Published
2014-08-26—Filed