NON-VOLATILE MEMORY WITH SPLIT WRITE AND READ BIT LINES Russian patent published in 2014 - IPC G11C17/18 

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. A single-bit non-volatile memory (NVM) cell comprises a first NVM one-time-write element directly connected to a write bit line; a first write access transistor connecting the first NVM one-time-write element to a ground, wherein the gate of the first write access transistor is connected to a write word line; and a first read access transistor directly connected to the first NVM one-time-write element and directly connected to a read bit line, wherein the gate of the first read access transistor is connected to a read word line.

EFFECT: high throughput of single-bind non-volatile memory cells by splitting bit lines.

18 cl, 9 dwg