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2 646 411

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IPC

C30B31/20(2006-01-01)

C03B29/06(2006-01-01)

H01L21/261(2006-01-01)

H01L21/263(2006-01-01)

(21) (22)

Application

2017120257, 2017-06-09

(24)

Start date

2017-06-09

(22)

Actual filing date

2017-06-09

(45)

Published

2018-03-05

(72)

Inventor

Gerasimenko Nikolaj NikolaevichZaporozhan Olga AleksandrovnaKuznetsov Yurij Aleksandrovich

(73)

Holder

Federalnoe Gosudarstvennoe Avtonomnoe Obrazovatelnoe Uchrezhdenie Vysshego Obrazovaniya Issledovatelskij Universitet Institut Elektronnoj Tekhniki"

METHOD FOR PRODUCING SILICON WITH ISOTOPIC COMPOSITION Si, Si Russian patent published in 2018 - IPC C30B31/20 C03B29/06 H01L21/261 H01L21/263

Abstract RU 2646411 C1

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of transmutation doping of semiconductor materials, in particular to the production of silicon with a certain isotopic composition, which can be used to create quantum information bits on nuclear spins of phosphorus atoms obtained by transmutation of separate atoms of such silicon. To this end, a single crystal of silicon is irradiated with thermal neutrons. After irradiation, the silicon will consist of only isotopes ²⁸Si, ³⁰Si and phosphorus ³¹P. Use of such silicon will increase the relaxation time of spins of phosphorus atoms from several milliseconds to several hours at a temperature of 4K, or up to 40 minutes at room temperature. This time is more than enough to use such quantum bits for calculations.

EFFECT: enables use in laboratories that are not equipped with cooling apparatus.

1 cl

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RU 2 646 411 C1

Authors

Gerasimenko Nikolaj Nikolaevich

Zaporozhan Olga Aleksandrovna

Kuznetsov Yurij Aleksandrovich

Dates

2018-03-05—Published

2017-06-09—Filed