METHOD OF PREPARING POROUS SILICON STRUCTURE Russian patent published in 2005 - IPC

FIELD: interaction substance technology.

SUBSTANCE: preparation of porous nanostructure of silicon consists in forming pores in silicon-containing base wherein silicon is present in the form of one of three stable isomers, summary content of the two remaining isotopes not exceeding half their natural occurrence. For example, if ²⁸Si is present, base can include ²⁹Si and ³⁰Si isotopes in sum not exceeding 3.5%; if ²⁹Si is present, base can include ²⁸Si and ³⁰Si isotopes not exceeding in sum 47%; and if ³⁰Si is present, base can include ²⁸Si and ²⁹Si isotopes not exceeding in sum 48%.

EFFECT: increased atomic homogeneity of porous silicon nanostructure resulting in improved quality of porous layer, which enables realization of certain nuclear physical effects.

4 cl, 2 ex