METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L23/48 

FIELD: chemistry.

SUBSTANCE: method for manufacturing semiconductor device (50), which comprises first element (10) and second element (20) to be attached to the first element, comprising: a) formation of (Cu, Ni)₆Sn₅ on Ni-film (12), formed on the first element by melting first Sn-Cu solder (14), containing 0.9% of Cu by weight or more, on the Ni-film of the first element; a) formation of (Cu, Ni)₆Sn₅ on Ni-film (22), formed on the second element by melting second Sn-Cu solder (24), containing 0.9% of Cu by weight or more, on the Ni-film of the second element; and c) connecting the first element and the second element to each other by melting the first Sn-Cu solder performed in step a), and the second Sn-Cu solder performed in step b), in such a way that the first Sn-Cu solder and the second Sn-Cu solder are combined into one.

EFFECT: invention provides a predetermined amount of (Cu, Ni)₆Sn₅ on the Ni-film of each of the connected elements.

4 cl, 22 dwg