METHOD OF PRODUCING CRYSTALLOGRAPHICALLY ALIGNED QUASI MONOCRYSTALLINE INTERMETALLIC THIN FILMS Russian patent published in 2016 - IPC C23C14/18 C23C14/24 C23C14/58 

FIELD: physics.

SUBSTANCE: invention relates to physics of low-dimensional structures namely to a method of producing quasi monocrystalline intermetallic thin film of nano-sized structure, and can be used in different high-tech fields of industry and science for creating nano structured materials. On the glass substrate in vacuum at residual pressure of at least 10^-5 torr copper and tin films are applied with layer thickness of 30-60 nm - up to six layers in total in sequence Cu/Sn/Cu/Sn/Cu/Sn and the chemical reaction between layers is conducted by relaxation annealing with moderate rate of 1 deg/s from room temperature to 600 °C in vacuum at residual pressure of at least 10^-5 torr to obtain a column oriented structure in the film.

EFFECT: invention is aimed at obtaining crystallographically aligned quasi monocrystalline intermetallic thin films of Cu₆Sn₅.

1 cl, 9 dwg, 2 tbl, 5 ex