METHOD OF VCSEL CRYSTALS MOUNTING ON CRYSTAL HOLDER Russian patent published in 2017 - IPC H01S5/22 

FIELD: machine building.

SUBSTANCE: use: for VCSEL crystals mounting on crystal holder. Summary of invention is, that method of VCSEL crystals mounting on crystal holder contains following stages: formation of p-type mesastructures by providing electric p-contacts on mesastructures upper part, formation of n-type mesastructure by means of mesastructure coating with electrically insulating passivating layer, overlapping, at least, mesastructure p-n junction, non-wetting layer deposition on crystals VCSEL connection side, additional non-wetting layer deposition on crystal holder side, wherein said non-wetting layers are deposited with calculated pattern or their patterns are formed after deposition to generate corresponding connection regions on crystal holder and VCSEL crystals, which connection regions provide wetted surface for solder, application of solder on connection region of, at least, one of two connection sides, arrangement of VCSEL crystals on crystal holder and soldering of VCSEL crystals to crystal holder without VCSEL crystals fixation relative to crystal holder, to prevent displacement of VCSEL crystals on crystal holder due to fused solder surface tension forces, wherein VCSEL crystal contains VCSEL grid with emitting from lower side, which is welded by its mesastructure to crystal holder, wherein before non-wettable layer deposition on VCSEL crystals connection side first metal layers deposited, which is electrically connected to VCSEL n-contacts and overlaps n-type mesastructure, wherein said n-contacts form conductive network between p-type VCSEL mesastructures for VCSEL electric connection and uniform current distribution between p-type mesastructures, wherein second metal layer is deposited at once with first metal layer, in order to overlap p-type mesastructure and p-contacts, wherein first metal layer and second metal layer mechanically stabilize VCSEL crystals so, that electrical connection with n-contact is located at same height as p-contacts.

EFFECT: technical result is higher accuracy of VCSEL crystals alignment on crystal holder without much time-consuming measures.

8 cl, 3 dwg