SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Russian patent published in 2017 - IPC H01L23/495 

FIELD: electricity.

SUBSTANCE: semiconductor device (2) contains the first and the second semiconductor elements (3, 5) and the first and the second conductive elements (10, 29). A first electrode (3a) on the first semiconductor element is mounted unto the first element of the bar (12) of the first conductive element via a first adhesive layer (8a). The second electrode (5b) on the second semiconductor element is mounted to the second element of the bar (25) of the second conductive element by a second adhesive layer (8f). The first connecting element (13) of the first conductive element is mounted to the second connecting element (26) of the second conductive element via the intermediate adhesive layer (8g). The first surface of the first connecting element, which is facing the second connecting element, the side surface of the first connecting element, which is a continuation of mentioned first surface, the second surface of the second connecting element, which is facing the first connecting element, and the side surface of the second connecting element, which is a continuation of mentioned second surface coated with nickel layers (19a, 19b).

EFFECT: invention provides a semiconductor device and its manufacturing method to limit the development of the impact of electrotransmission phenomena in the intermediate bonding layer, which holds together the first and second connecting elements.

8 cl, 19 dwg