FIELD: chemical industry.
SUBSTANCE: invention relates to production of polycrystalline boron carbide. Boron carbide is produced by plasma-chemical synthesis in a high-frequency discharge inside reactor containing electrodes made in the form of substrates for the precipitation of boron carbide. Synthesis is carried out at a discharge power of 500 W in an atmospheric pressure plasma, when hydrogen, boron fluoride and methane are fed to the reactor. Flux ratio H2:BF3 is 2.6, flux ratio BF3:CH4 is 5.5.
EFFECT: proposed method makes it possible to produce isotope modifications of polycrystalline boron carbide in a continuous mode.
1 cl, 1 tbl
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