METHOD OF TECHNOLOGICAL SILICON RECEIVING Russian patent published in 2009 - IPC C01B33/25 

FIELD: metallurgy.

SUBSTANCE: technological silicon is received by thermal-electric restoration of silica by carbonaceous material, containing active solid carbon. During the process of thermal-electric restoration of silica it is implemented control of total content of active solid carbon in initial restoration charge before feeding to furnace throat depending on content of physicochemical properties of charge components.

EFFECT: reduction of carbonaceous reducer consumption while receiving of silicon, increasing of silicon extraction with saving of stable electric melting practice while reduction of electric power discharge intensity.

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