FIELD: chemistry.
SUBSTANCE: invention relates to the production of polycrystalline films of sulfide and cadmium oxide on monocrystalline silicon by means of an aerosol pyrolysis technique of a solution on a heated substrate at a constant temperature in the range of 450–500 °C. According to the invention, the pyrolysis of the aerosol is carried out in two steps: on the former, a 0.03 mol/l aqueous solution of cadmium chloride or nitride is used as the spray solution, and on the second – 0.15 mol/l aqueous solution of thiourea.
EFFECT: technical result of the invention consists in the deposition of mirror-smooth polycrystalline films of hexagonal modification of cadmium sulfide up to 250 nm thick in monocrystalline silicon, which have good adhesion to the substrate.
1 cl, 2 dwg, 2 ex
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