FIELD: chemistry.
SUBSTANCE: invention relates to the production of polycrystalline films of sulfide and cadmium oxide on monocrystalline silicon by means of an aerosol pyrolysis technique of a solution on a heated substrate at a constant temperature in the range of 450–500 °C. According to the invention, the pyrolysis of the aerosol is carried out in two steps: on the former, a 0.03 mol/l aqueous solution of cadmium chloride or nitride is used as the spray solution, and on the second – 0.15 mol/l aqueous solution of thiourea.
EFFECT: technical result of the invention consists in the deposition of mirror-smooth polycrystalline films of hexagonal modification of cadmium sulfide up to 250 nm thick in monocrystalline silicon, which have good adhesion to the substrate.
1 cl, 2 dwg, 2 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING FILMS OF SOLID SOLUTIONS OF SUBSTITUTION OF PBCDS BY ION-EXCHANGE TRANSFORMATION OF CDS FILMS | 2019 |
|
RU2738586C1 |
| METHOD OF GROWING CADMIUM SULPHIDE NANOPARTICLES ON CARBON NANOTUBES AND METHOD OF MAKING LIGHT SOURCE | 2010 |
|
RU2459316C2 |
| METHOD FOR PRODUCING SUBSTRATE BASED ON SILICON CARBIDE AND SILICON CARBIDE SUBSTRATE | 2018 |
|
RU2756815C2 |
| PROCESS OF PHOTOCONDUCTIVE RADIATION-PROOF FILM MANUFACTURING | 2006 |
|
RU2328059C1 |
| CHEMICAL DEPOSITION FROM VAPOUR PHASE AT ATMOSPHERIC PRESSURE | 2005 |
|
RU2421418C2 |
| MANUFACTURING METHOD OF FUNCTIONAL ELEMENT OF SEMICONDUCTOR DEVICE | 2019 |
|
RU2727557C1 |
| METHOD FOR PREPARING PHOTOSENSITIVE CADMIUM SULFIDE FILMS | 0 |
|
SU890907A1 |
| ARTICLE CONTAINING A SILICON BASE AND A COATING LAYER IN THE FORM OF A NANOFILM OF CARBON WITH A DIAMOND-TYPE CRYSTAL LATTICE, AND A METHOD OF MAKING SAID ARTICLE | 2019 |
|
RU2715472C1 |
| SUBSTRATE COATED WITH COMPOSITE FILM, METHOD OF MANUFACTURE OF SUCH SUBSTRATES AND THEIR APPLICATION | 2002 |
|
RU2288167C2 |
| METHOD OF PRODUCING THIN EPITAXIAL LAYERS OF β-SIC ON MONOCRYSTALLINE SILICON | 2013 |
|
RU2524509C1 |
